Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling
- Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
- Solid State Division, Oak Ridge National Laboratory, MS-6048, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States)
- Semiconductor Equipment Operations, Eaton Corporation, Beverly, Massachusetts 01915 (United States)
A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes advantage of the fact that metal impurities, such as Au, are trapped in the region of excess vacancies produced by MeV Si implants into silicon. In this work, the clustered-vacancy regions produced by 1-, 2-, and 8-MeV Si implants into silicon have been labeled with Au diffused in from the front surface at 750thinsp{degree}C. The trapped Au was profiled with Rutherford backscattering spectrometry. The dynamics of the clustered-vacancy region were monitored for isochronal annealing at 750{endash}1000thinsp{degree}C, and for isothermal annealing at 950thinsp{degree}C, for 10{endash}600 s. Cross-sectional transmission electron microscopy analysis revealed that after the drive-in anneal, the Au in the region of vacancy clusters is in the form of precipitates. The results demonstrate that the Au-labeling technique offers a convenient and potentially quantitative tool for depth profiling vacancies in clusters. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 664654
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 73; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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