Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation

Technical Report · Tue Apr 01 04:00:00 EST 1997

DOI:https://doi.org/10.2172/474920· OSTI ID:474920

Venezia, V C ^[1]; Haynes, T E ^[1]; Agarwal, A ^[1]; Gossmann, H J; Eaglesham, D J ^[2]

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1. Oak Ridge National Lab., TN (United States). Solid State Div.
2. Lucent Technologies, Murray Hill, NJ (United States). Bell Lab.

The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si{sup +}, 1 {times} 10{sup 16}/cm{sup 2}, implant. A 4{times} larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10{times} smaller diffusion relative to markers without the MeV Si{sup +} implant. This data demonstrates that a 2 MeV Si{sup +} implant injects vacancies into the near surface region.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States); Oak Ridge Associated Universities, Inc., TN (United States)
• DOE Contract Number: AC05-96OR22464; AC05-76OR00033
• OSTI ID: 474920
• Report Number(s): CONF-970302--6; ON: DE97006058
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
DIFFUSION
DOPED MATERIALS
EXPERIMENTAL DATA
INTEGRATED CIRCUITS
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
SILICON
SILICON IONS
VACANCIES