Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

Journal Article · Mon Aug 27 04:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1385192· OSTI ID:40277635

Venezia, V C; Pelaz, L; Gossmann, H.-J. L.; Haynes, T E; Rafferty, C S

We have measured the evolution of the excess-vacancy region created by a 2 MeV, 10{sup 16}/cm{sup 2} Si implant in the silicon surface layer of silicon-on-insulator substrates. Free vacancy supersaturations were measured with Sb dopant diffusion markers during postimplant annealing at 700, 800, and 900 C, while vacancy clusters were detected by Au labeling. We demonstrate that a large free vacancy supersaturation exists for short times, during the very early stages of annealing between the surface and the buried oxide (1 {mu}m below). Afterwards, the free vacancy concentration returns to equilibrium in the presence of vacancy clusters. These vacancy clusters form at low temperatures and are stable to high temperatures, i.e., they have a low formation energy and high binding energy.

• Research Organization: Oak Ridge National Laboratory
• Sponsoring Organization: (US)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 40277635
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 79; ISSN 0003-6951
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BINDING ENERGY
DIFFUSION
ION IMPLANTATION
OXIDES
SILICON
SUBSTRATES
SUPERSATURATION