Transient enhanced diffusion of Sb and B due to MeV silicon implants

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119150· OSTI ID:529985

Eaglesham, D J; Haynes, T E; Gossmann, H; Jacobson, D C; Stolk, P A; Poate, J M ^[1]

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1. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We discuss possible mechanisms for a simultaneous supersaturation of both types of point defects. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 529985
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 70; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ANNEALING
ANTIMONY
BORON
CRYSTAL DOPING
DIFFUSION
INTERSTITIALS
ION IMPLANTATION
MOLECULAR BEAM EPITAXY
SILICON