Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
- AT&T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)
- Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 277178
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 68; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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