Defects in implanted Si
Conference
·
OSTI ID:199792
- Brookhaven National Laboratory, Upton, NY (United States)
Defect formation, accumulation, annealing and defect-impurity interactions as well as more specific defect-related problems have been extensively studied in ion implanted Si. Defect formation has been measured at RT as well as at elevated temperature and the results are compared to TRIM simulations. A problem of special relevance to industrial applications is the formation of dislocation ({open_quotes}breakdown{close_quotes}) in the top layer of structures such as SIMOX formed by implantation at elevated temperature. The role of small vacancy clusters has been examined and it is observed that these clusters can be detected with positrons at doses seven orders of magnitude below that of {open_quotes}breakdown.{close_quotes} Dislocations were observed using TEM and RBS, whereas vacancy clusters could be detected only by the use of positrons. Defect-oxygen interactions and its relation to oxygen diffusion have been studied.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 199792
- Report Number(s):
- CONF-941129--
- Country of Publication:
- United States
- Language:
- English
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