Extreme implanting in Si: A study of ion-induced damage at high temperature and high dose

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:199582

Holland, O W ^[1]

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1. Oak Ridge National Lab., TN (United States)

Ion-solid interactions near room temperature and below have been well studied in single-crystal Si. While this has led to a better understanding of the mechanisms responsible for nucleation and growth of lattice damage during irradiation, these studies have not, in general, been extended to high temperatures (e.g., >200{degrees}C). This is the case despite the commercialization of ion beam technologies which utilize high-temperature processing, such as separation by implantation of oxygen (SIMOX). In this process, a silicon-on-insulator (SOI) material is produced by implanting a high dose of oxygen ions into a Si wafer to form a buried, stoichiometric oxide layer. Results will be presented of a study of damage accumulation during high-dose implantation of Si at elevated temperatures. In particular, O{sup +}-ions were used because of the potential impact of the results on the SIMOX technology. It will be shown that the nature of the damage accumulation at elevated temperatures is quite distinctive and portends the presence of a new mechanism, one which is only dominant under the extreme conditions encountered during ion beam synthesis (i.e., high temperature and high dose). This mechanism is discussed and shown to be quite general and not dependent on the chemical identity of the ions. Also, techniques for suppressing this mechanism by {open_quotes}defect engineering{close_quotes} are discussed. Such techniques are technologically relevant because they offer the possibility of reducing the defect density of the SOI produced by SIMOX.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 199582
• Report Number(s): CONF-941129--
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
CRYSTAL DEFECTS
DAMAGE
DOSE-RESPONSE RELATIONSHIPS
ION IMPLANTATION
SILICON
TEMPERATURE DEPENDENCE