Technique to suppress dislocation formation during high-dose oxygen implantation of Si

Journal Article · Mon Apr 10 04:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.113312· OSTI ID:29239

Holland, O W; Thomas, D K; Zhou, D S ^[1]

---

1. Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6048 (United States)

Damage accumulation during high-dose oxygen implantation of Si to form a silicon-on-insulator material can deleteriously affect the quality of the material. In particular, dislocations formed in the superficial silicon layer are difficult to anneal, requiring temperatures near the melting point of Si to reduce their density to acceptable levels. A technique to suppress the formation of these dislocations during irradiation is presented. The success of this technique lies in its ability to interact with vacancy-type defects within the superficial layer whose accumulation precedes dislocation formation. A Si{sup +} self-ion beam is used as a spatially specific tool to introduce Si atoms into the vicinity of these precursor defects prior to the onset of dislocation growth. The interaction of this beam with the precursor defects is shown to be effective in suppressing dislocation formation during subsequent O{sup +} implantation.

• Research Organization: Oak Ridge National Laboratory
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 29239
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 66; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DEFECTS
DAMAGE
DISLOCATIONS
ION IMPLANTATION
OXYGEN ADDITIONS
OXYGEN IONS
SILICON
VACANCIES