Buried insulator formation in silicon by ion implantation: A review
Conference
·
OSTI ID:7194918
Dynamic annealing, impurity diffusion, chemical bonding and post-implantation annealing processes in the formation of silicon-on-insulator (SOI) materials by implantation of oxygen (SIMOX) and nitrogen (SIMNI) are reviewed. Implantation temperatures for SOI formation must be selected for dynamic annealing during implantation to retain crystallinity in a Si overlayer while maintaining implanted ion profiles in Si. These conditions are satisfied by temperatures near 500/sup 0/C for beam currents and doses used in most studies for both SIMOX and SIMNI, and the implanted ions are chemically bonded into the Si host. SIMNI differs from SIMOX in two important ways: (i) in contrast to SIMOX where a high diffusivity of O in SiO/sub 2/ increases the oxide layer thickness when the O concentration exceeds that for SiO/sub 2/ during implantation, N diffusivity is low in both Si and in Si/sub 3/N/sub 4/ so that N can accumulate in excess of that for Si/sub 3/N/sub 4/, and (ii) the buried nitride layer crystallizes during post-implantation annealing near 1200/sup 0/C whereas the oxide layer remains amorphous. Effects of these differences on resultant SOI materials are considered. Information from recent studies on combined O and N implantations for SOI, and effects of annealing SIMOX and SIMNI at temperatures above 1200/sup 0/C are included in the review. 50 refs., 13 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7194918
- Report Number(s):
- SAND-86-2037C; CONF-861068-13; ON: DE87002695
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
CHARGED PARTICLES
CRYSTALLIZATION
DOCUMENT TYPES
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
NITROGEN IONS
OXYGEN IONS
PHASE TRANSFORMATIONS
PRODUCTION
REVIEWS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
CHARGED PARTICLES
CRYSTALLIZATION
DOCUMENT TYPES
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
NITROGEN IONS
OXYGEN IONS
PHASE TRANSFORMATIONS
PRODUCTION
REVIEWS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON