Paramagnetic defect centers in BESOI and SIMOX buried oxides

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6908036

Warren, W L; Shaneyfelt, M R; Schwank, J R; Fleetwood, D M; Winokur, P S ^[1]; Devine, R A.B. ^[2]; Maszara, W P; McKitterick, J B ^[3]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Centre National d'Etudes Telecommunications, Meylan (France)
3. Allied-Signal Aerospace Corp., Columbia, MD (United States)

The authors have combined electron paramagnetic resonance and capacitance-voltage measurements to identify the chemical nature and charge state of defects in BESOI and SIMOX materials. The four types of defect centers observed, charged oxygen vacancies, delocalized hole centers, amorphous-Si centers, and oxygen-related donors, are strikingly similar. In the BESOI materials, the radiation-induced EPR centers are located at or near the bonded interface. Therefore, the bonded interface is a potential hole trap site and may lead to radiation-induced back-channel leakage. In SIMOX materials it is found that all of the defects in the buried oxide are due to excess-Si. The results using poly-Si/thermal oxide/Si structures strongly suggest that it is the post-implantation, high temperature anneal processing step in SIMOX that leads to their existence. The anneal leads to the out-diffusion of oxygen from the buried oxide creating excess-Si related defects in the oxide and O-related donors in the underlying Si substrates. Last, the study has elucidated a number of interesting aspects regarding the physical nature of a relatively new class of defects in SiO[sub 2]: delocalized spin centers. The authors find that they are hole traps in both SIMOX and BESOI materials.

• OSTI ID: 6908036
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
ION IMPLANTATION
MATERIALS
MICROELECTRONIC CIRCUITS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES