Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

X-radiation response of SIMOX buried oxides: Influence of the fabrication process

Journal Article · · IEEE Transactions on Nuclear Science
DOI:https://doi.org/10.1109/23.510719· OSTI ID:277717
; ; ;  [1];  [2];  [3]
  1. CEA Centre d`Etudes de Bruyeres, Bruyeres-le-Chatel (France)
  2. LETI, Grenoble (France)
  3. SOITEC, Grenoble (France)
+ Show Author Affiliations

X-ray induced electron and hole trapping properties have been investigated in SIMOX buried oxides of different processes, including standard and supplemental implantation oxides, as well as new thin and ultra-thin oxides. The effect of the substrate bias applied during irradiation is studied, and then used to extract both hole and electron trapping parameters. The results demonstrate that varying the oxygen implantation conditions has very little effect on the radiation induced behavior of the material. They show that the charge trapping properties of the buried oxide are related to the ultra high temperature anneal performed on the confined oxide layer, and confirm that the post implantation anneal is the most critical part of the SIMOX process.

OSTI ID:
277717
Report Number(s):
CONF-9509107--
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 43; ISSN IETNAE; ISSN 0018-9499
Country of Publication:
United States
Language:
English

Similar Records

Charge trapping and transport properties of SIMOX buried oxides with a supplemental oxygen implant
Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6953189
Paramagnetic defect centers in BESOI and SIMOX buried oxides
Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6908036
Effect of supplemental O implantation on the radiation-induced hole traps in SIMOX buried oxides
Conference · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6488581

Related Subjects

42 ENGINEERING
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
ELECTRICAL PROPERTIES
FABRICATION
ION IMPLANTATION
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
X RADIATION