Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Effect of supplemental O implantation on the radiation-induced hole traps in SIMOX buried oxides

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6488581
;  [1];  [2];  [3]
  1. Univ. of Alabama, Birmingham, AL (United States)
  2. Naval Research Lab., Washington, DC (United States)
  3. ARACOR, Washington, DC (United States)
+ Show Author Affiliations

The authors describe electrical and spectroscopic measurements of SIMOX subjected to supplemental oxygen implantation and standard 1,000 C post implantation annealing. Point contact transistor measurements indicate that the Supplemental oxygen implantation creates a net increase in radiation-induced trapped charge, and, surprisingly, electron paramagnetic resonance studies show that O vacancy concentration increases. The electron paramagnetic resonance results suggest that the radiation tolerance of the supplemental oxides is due to insufficiently annealed implantation damage. A higher post supplemental anneal temperature minimizes the radiation-induced trapped charge, but further studies are necessary to assess the total impact of the high temperature anneal.

OSTI ID:
6488581
Report Number(s):
CONF-940726--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English

Similar Records

Charge trapping and transport properties of SIMOX buried oxides with a supplemental oxygen implant
Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6953189
Reduction of charge trapping and electron tunneling in SIMOX by supplemental implantation of oxygen
Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6953913
Paramagnetic defect centers in BESOI and SIMOX buried oxides
Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6908036

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
ERRORS
FABRICATION
ION IMPLANTATION
IONS
OXIDES
OXYGEN COMPOUNDS
OXYGEN IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES