Effect of supplemental O implantation on the radiation-induced hole traps in SIMOX buried oxides
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6488581
- Univ. of Alabama, Birmingham, AL (United States)
- Naval Research Lab., Washington, DC (United States)
- ARACOR, Washington, DC (United States)
The authors describe electrical and spectroscopic measurements of SIMOX subjected to supplemental oxygen implantation and standard 1,000 C post implantation annealing. Point contact transistor measurements indicate that the Supplemental oxygen implantation creates a net increase in radiation-induced trapped charge, and, surprisingly, electron paramagnetic resonance studies show that O vacancy concentration increases. The electron paramagnetic resonance results suggest that the radiation tolerance of the supplemental oxides is due to insufficiently annealed implantation damage. A higher post supplemental anneal temperature minimizes the radiation-induced trapped charge, but further studies are necessary to assess the total impact of the high temperature anneal.
- OSTI ID:
- 6488581
- Report Number(s):
- CONF-940726--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 41:6Pt1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
ERRORS
FABRICATION
ION IMPLANTATION
IONS
OXIDES
OXYGEN COMPOUNDS
OXYGEN IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
ERRORS
FABRICATION
ION IMPLANTATION
IONS
OXIDES
OXYGEN COMPOUNDS
OXYGEN IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES