Charge trapping and transport properties of SIMOX buried oxides with a supplemental oxygen implant

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6953189

Boesch, Jr, H E; Taylor, T L ^[1]; Krull, W A ^[2]

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1. Army Research Lab., Adelphi, MD (United States)
2. IBIS Technology Corp., Danvers, MA (United States)

The radiation response characteristics of single and multiple-implant SIMOX (separation by implantation of oxygen) buried oxide layers that had received a supplemental oxygen implant and anneal step were measured as a function of temperature and time after exposure to short radiation pulses. A fast capacitance-voltage technique was used for these measurements. The results indicate that, in comparison to standard SIMOX, the supplemental-implant SIMOX buried oxide shows hole motion through the oxide, greatly reduced bulk hole trapping, and little or no bulk shallow electron trapping. Substantial interfacial hole trapping was observed in these materials, as well as deep electron trapping in the single-implant material.

• OSTI ID: 6953189
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CARRIER MOBILITY
DATA
ELECTRONIC CIRCUITS
EXPERIMENTAL DATA
FABRICATION
INFORMATION
ION IMPLANTATION
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
MOBILITY
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
TEMPERATURE DEPENDENCE
TIME DEPENDENCE