Reduction of charge trapping and electron tunneling in SIMOX by supplemental implantation of oxygen

Conference · Wed Dec 01 04:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6953913

Stahlbush, R E; Hughes, H L ^[1]; Krull, W A ^[2]

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1. Naval Research Lab., Washington, DC (United States)
2. IBIS Technology Corp., Danvers, MA (United States)

Silicon-on-insulator, SOI, technologies are being aggressively pursued to produce high density, high speed, radiation tolerant electronics. The dielectric isolation of the buried oxide makes it possible to design integrated circuits that greatly minimize single event upset and eliminate dose-rate induced latchup and upset. The reduction of excess-silicon related defects in SIMOX by the supplemental implantation of oxygen has been examined. The supplemental implant is 6% of the oxygen dose used to form the buried oxide, and is followed by a 1,000 C anneal, in contrast to the >1,300 C anneal used to form the buried oxide layer of SIMOX. The defects examined include shallow electron traps, deep hole traps, and silicon clusters. The radiation-induced shallow electron and deep hole trapping are measured by cryogenic detrapping and isothermal annealing techniques. The low-field (3 to 6 MV/cm) electron tunneling is interpreted as due to a two phase mixture of stoichiometric SiO[sub 2] and Si clusters a few nm in size. Single and triple SIMOS samples have been examined. All of the defects are reduced by the supplemental oxygen processing. Shallow electron trapping is reduced by an order of magnitude. Because of the larger capture cross section for hole trapping, hole trapping is not reduced as much. The low-field electron tunneling due to Si clusters is also significantly reduced. Both uniform and nonuniform electron tunneling have been observed in SIMOX samples without supplement processing. In samples exhibiting only uniform tunneling, electron capture at holes has been observed. The nonuniform tunneling is superimposed upon the uniform tunneling and is characterized by current spiking.

• OSTI ID: 6953913
• Report Number(s): CONF-930704--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 40:6Pt1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE CARRIERS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOSES
ELECTRONIC CIRCUITS
FABRICATION
HARDENING
INTEGRATED CIRCUITS
ION IMPLANTATION
IONS
MICROELECTRONIC CIRCUITS
OXYGEN IONS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING