Transient enhanced diffusion and defect studies in B implanted Si
Conference
·
OSTI ID:621296
- Univ. of Florida, Gainesville, FL (United States); and others
Si wafers were implanted with 20keV boron ions to a dose of 2{times}10{sup 14}cm{sup -2}. Subsequent anneals were performed in a nitrogen ambient at 650{degrees}C to 800{degrees}C for various times. The microstructures of the samples were examined using transmission electron microscopy (TEM). [311] defects were the only type of defects observed in all the samples. Transient enhanced diffusion (TED) behavior of boron atoms was studied using secondary ion mass spectrometry (SIMS). The diffusivity enhancement was calculated using FLOOPS simulations. The activation energy for the TED saturation process was determined to be 1.6eV. Contributions of boron interstitial clusters and [311] defects to TED will be discussed.
- OSTI ID:
- 621296
- Report Number(s):
- CONF-9606110--
- Country of Publication:
- United States
- Language:
- English
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