Implantation induced extended defects and transient enhanced diffusion in silicon

Conference · Tue Aug 01 04:00:00 EDT 1995

OSTI ID:415149

Chen, J; Liu, J; Listebarger, J; Krishnamoorthy, W; Zhang, L; Jones, K S ^[1]

---

1. Univ. of Florida, Gainesville, FL (United States)

Transient enhanced diffusion (TED) of dopant in silicon caused by point defects during annealing of implanted. Si has become one of the essential concerns in miniaturization of silicon device technology. In order to control and minimize the TED effect, a fundamental understanding of the evolution of the point defects upon annealing and the interaction between point defects and extended defects and their effects on dopant diffusion is necessary. Our studies were carried out by two parts; (1) For understanding the evolution of <311> and <110> defects, B{sup +} and Si{sup +} implantation at energies (from 5 keV to 40 keV) and doses in the range from 5 x 10{sup 12} to 1 x 10{sup 14}/cm{sup 2} were used. The annealing kinetics were investigated using a N{sub 2} ambient with temperatures for time ranging from 500{degrees}C to 1100{degrees}C for time ranging from 3 min to 3 hours. A matrix of implant energy vs. dose on formation threshold of <311> and <110> defect, interstitials napped and dissolved condition were obtained. (2) For Understanding the interaction between Type II dislocation loop and point defect a B doped buried marker layer was used. The oxidation of silicon surface used as a interstitials injection source and a buried type II loop layer as a point defect detector used to quantify the flux of interstitials injected. Combining the flux measured by loops and dopant diffusion the D{sub I} C{sub I} was determined. The diffusion limited kinetics was concluded. The TED from <311> and EOR (End of Range) <110> defect was studied using 8keV B{sup +} implanted Si to a dose of the le14 and 190keV Ge{sub +} implanted to a dose of le15. Subsequent anneals are done for 5 min and 30 min, respectively, These defects affect dopant diffusion by trapping and releasing point defects.

• Research Organization: National Renewable Energy Lab., Golden, CO (United States)
• OSTI ID: 415149
• Report Number(s): NREL/SP--413-8250; CONF-9508143--Extd.Absts.; ON: DE95009278
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BORON IONS
DIFFUSION
IMPURITIES
INTERSTITIALS
ION IMPLANTATION
POINT DEFECTS
PROCESSING
SILICON
SILICON IONS