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Quantitative Measurements of Vacancy Defects in High-Energy Ion Implanted Si

Journal Article · Tue Jan 01 04:00:00 EST 2002 · Defect and Diffusion Forum

DOI:https://doi.org/10.4028/www.scientific.net/DDF.200-202.177· OSTI ID:829069

Kalyanaraman, R ^[1]

ORNL

No abstract prepared.

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Research Organization:: ORNL Oak Ridge National Laboratory

Sponsoring Organization:: DOE

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 829069

Report Number(s):: P02-113279

Journal Information:: Defect and Diffusion Forum, Journal Name: Defect and Diffusion Forum Vol. 200-2

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
DEFECTS
ION IMPLANTATION
ORNL
SILICON