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The Binding Energy of Vacancy Clusters Generated in Silicon by High-Energy Ion Implantation and Annealing in Silicon

Journal Article · Mon Jan 01 04:00:00 EST 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1385192· OSTI ID:829180

Venezia, V C ^[1]

ORNL

No abstract prepared.

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Research Organization:: ORNL Oak Ridge National Laboratory

Sponsoring Organization:: DOE

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 829180

Report Number(s):: P01-110762

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 79; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BINDING ENERGY
ION IMPLANTATION
SILICON