Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High Temperature Anneals in Nitric Oxide
- ORNL
No abstract prepared.
- Research Organization:
- ORNL Oak Ridge National Laboratory
- Sponsoring Organization:
- DOE
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 829259
- Report Number(s):
- P00-108512
- Journal Information:
- Electron Device Letters, Journal Name: Electron Device Letters Journal Issue: 4 Vol. 22
- Country of Publication:
- United States
- Language:
- English
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