High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors

Das, Suman; Isaacs-Smith, Tamara; Ahyi, Ayayi; Kuroda, Marcelo A.; Dhar, Sarit

doi:10.1063/5.0073523

High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors

Journal Article · Tue Dec 07 23:00:00 EST 2021 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0073523· OSTI ID:1834667

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In this work, p-channel 4H-SiC MOSFETs were fabricated and analyzed at high temperature. It is demonstrated that nitridation of the gate oxide enables enhancement mode operation in these devices. Nitrogen incorporation at the 4H-SiC/SiO2 interface by nitric oxide annealing reduces the interface trap density energetically located in the lower half of the 4H-SiC bandgap, resulting in viable high temperature p-channel devices. In the 27–300 °C temperature range, the threshold voltage decreases with increasing temperature, consistent with the reduction of occupied interface traps at higher temperatures. The hole channel mobility is weakly temperature dependent under strong inversion conditions. Hall measurements support that above the threshold voltage, the mobility is limited by surface roughness scattering. In weaker inversion, the channel conductivity is limited by interface hole trapping and Coulomb scattering. In addition, high temperature bias stress measurements confirm a temperature activated hole trapping under negative gate bias, which requires further investigations.

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Sponsoring Organization:: USDOE

OSTI ID:: 1834667

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 22 Vol. 130; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (23)

Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface Shenoy, J. N.; Chindalore, G. L.; Melloch, M. R. Journal of Electronic Materials, Vol. 24, Issue 4 https://doi.org/10.1007/BF02659691	journal	April 1995
Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC Saks, N. S.; Agarwal, A. K. Applied Physics Letters, Vol. 77, Issue 20 https://doi.org/10.1063/1.1326046	journal	November 2000
Effect of the oxidation process on the electrical characteristics of 4H–SiC p-channel metal-oxide-semiconductor field-effect transistors Okamoto, Mitsuo; Tanaka, Mieko; Yatsuo, Tsutomu Applied Physics Letters, Vol. 89, Issue 2 https://doi.org/10.1063/1.2221400	journal	July 2006
Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface Rozen, John; Dhar, Sarit; Dixit, S. K. Journal of Applied Physics, Vol. 103, Issue 12 https://doi.org/10.1063/1.2940736	journal	June 2008
Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures Shen, Xiao; Zhang, En Xia; Zhang, Cher Xuan Applied Physics Letters, Vol. 98, Issue 6 https://doi.org/10.1063/1.3554428	journal	February 2011
Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance Yoshioka, Hironori; Nakamura, Takashi; Kimoto, Tsunenobu Journal of Applied Physics, Vol. 111, Issue 1 https://doi.org/10.1063/1.3673572	journal	January 2012
Atomic state and characterization of nitrogen at the SiC/SiO ₂ interface Xu, Y.; Zhu, X.; Lee, H. D. Journal of Applied Physics, Vol. 115, Issue 3 https://doi.org/10.1063/1.4861626	journal	January 2014
Silicon carbide: A unique platform for metal-oxide-semiconductor physics Liu, Gang; Tuttle, Blair R.; Dhar, Sarit Applied Physics Reviews, Vol. 2, Issue 2 https://doi.org/10.1063/1.4922748	journal	June 2015
Bonding at the SiC − SiO 2 Interface and the Effects of Nitrogen and Hydrogen Wang, Sanwu; Dhar, S.; Wang, Shu-rui Physical Review Letters, Vol. 98, Issue 2 https://doi.org/10.1103/PhysRevLett.98.026101	journal	January 2007
Observation and characterization of near-interface oxide traps with C-V techniques Cohen, N. L.; Paulsen, R. E.; White, M. H. IEEE Transactions on Electron Devices, Vol. 42, Issue 11 https://doi.org/10.1109/16.469410	journal	January 1995
High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters Rahman, Ashfaqur; Roy, Sajib; Murphree, Robert IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 4, Issue 3 https://doi.org/10.1109/JESTPE.2016.2584599	journal	September 2016
P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and $\hbox{N}_{2}\hbox{O}$ Annealing Noborio, Masato; Suda, Jun; Kimoto, Tsunenobu IEEE Transactions on Electron Devices, Vol. 56, Issue 9 https://doi.org/10.1109/TED.2009.2025909	journal	September 2009
Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing Tachiki, Keita; Kimoto, Tsunenobu IEEE Transactions on Electron Devices, Vol. 68, Issue 2 https://doi.org/10.1109/TED.2020.3040207	journal	February 2021
Review of Silicon Carbide Power Devices and Their Applications She, Xu; Huang, Alex Q.; Lucia, Oscar IEEE Transactions on Industrial Electronics, Vol. 64, Issue 10 https://doi.org/10.1109/TIE.2017.2652401	journal	October 2017
MOS (Metal Oxide Semiconductors) Physics and Technology by E. H. Nicollian and J. R. Brews Wieder, H. H. Journal of Vacuum Science and Technology, Vol. 21, Issue 4 https://doi.org/10.1116/1.571867	journal	November 1982
Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide Okamoto, Mitsuo; Yatsuo, Tsutomu; Fukuda, Kenji Japanese Journal of Applied Physics, Vol. 48, Issue 4 https://doi.org/10.1143/JJAP.48.04C087	journal	April 2009
A P-Channel MOSFET on 4H-SiC Han, Ji Sheng; Cheong, K. Y.; Dimitrijev, Sima Materials Science Forum, Vol. 457-460 https://doi.org/10.4028/www.scientific.net/MSF.457-460.1401	journal	June 2004
Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices Das, Mrinal K.; Haney, Sarah K.; Jonas, Charlotte Materials Science Forum, Vol. 556-557 https://doi.org/10.4028/www.scientific.net/MSF.556-557.667	journal	September 2007
High Temperature Silicon Carbide CMOS Integrated Circuits Clark, David T.; Ramsay, Ewan P.; Murphy, A. E. Materials Science Forum, Vol. 679-680 https://doi.org/10.4028/www.scientific.net/MSF.679-680.726	journal	March 2011
Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application Holmes, Jim; Francis, A. Matthew; Getreu, Ian Journal of Microelectronics and Electronic Packaging, Vol. 13, Issue 4 https://doi.org/10.4071/imaps.527	journal	October 2016
Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide Noguchi, Munetaka; Iwamatsu, Toshiaki; Amishiro, Hiroyuki Japanese Journal of Applied Physics, Vol. 58, Issue 3 https://doi.org/10.7567/1347-4065/aafc51	journal	March 2019
Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature Moges, Kidist; Hosoi, Takuji; Shimura, Takayoshi Applied Physics Express, Vol. 12, Issue 6 https://doi.org/10.7567/1882-0786/ab1b53	journal	May 2019
Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel Okamoto, Mitsuo; Iijima, Miwako; Nagano, Takahiro Japanese Journal of Applied Physics, Vol. 51, Issue 2S https://doi.org/10.7567/JJAP.51.02BF05	journal	February 2012

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