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Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Journal Article · · Materials
DOI:https://doi.org/10.3390/ma15196736· OSTI ID:2424266
 [1];  [2];  [1];  [1];  [1]
  1. Auburn University, AL (United States)
  2. Auburn University, AL (United States); SemiQ Inc., Lake Forest, CA (United States)
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The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (Eeƒƒ) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be E$$^{-1.8}_{eƒƒ}$$ and E$$^{-2.4}_{eƒƒ}$$, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of Eeƒƒ in controlling the value of channel mobility in 4H-SiC MOSFETs.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
2424266
Journal Information:
Materials, Journal Name: Materials Journal Issue: 19 Vol. 15; ISSN 1996-1944
Publisher:
MDPICopyright Statement
Country of Publication:
United States
Language:
English

References (25)

Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering journal July 2020
High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors journal December 2021
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration journal January 1994
On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation journal January 1994
Power consumption estimation in CMOS VLSI chips journal June 1994
Correlation between inversion layer mobility and surface roughness measured by AFM journal April 1996
On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs journal January 2000
Application of wide bandgap devices in renewable energy systems — Benefits and challenges conference October 2014
Characterization of the electron mobility in the inverted <100> Si surface conference January 1979
High temperature SOI CMOS technology and circuit realization for applications up to 300°C conference May 2015
High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters journal September 2016
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces journal August 1980
A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation journal January 1987
A Physical Model of High Temperature 4H-SiC MOSFETs journal August 2008
Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs journal August 2015
Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing journal February 2021
Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides journal December 2021
Development of SiC-based Gas Sensors for Aerospace Applications journal January 2004
Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interface journal May 2020
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation journal January 2021
Body doping dependence of field-effect mobility in both n- and p-channel 4H-SiC metal-oxide-semiconductor field-effect transistors with nitrided gate oxides journal February 2022
Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process journal June 2022
Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application journal October 2016
Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide journal March 2019
Scattering Mechanism and Low Temperature Mobility of MOS Inversion Layers journal January 1974

Figures / Tables (7)

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Related Subjects

36 MATERIALS SCIENCE
4H-SiC MOSFET
Hall measurements
body bias
chemistry
materials science
metallurgy &amp; metallurgical engineering
nitridation
physics
scattering
transverse electric field