4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping

Zheng, Yongju; Isaacs-Smith, T.; Ahyi, A. C.; Dhar, S.

doi:10.1109/led.2017.2743002

4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping

Journal Article · Tue Aug 22 00:00:00 EDT 2017 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/led.2017.2743002· OSTI ID:2440711

^[1]; Isaacs-Smith, T. ^[2]; Ahyi, A. C. ^[2]; Dhar, S. ^[2]

Auburn University, AL (United States); Auburn University
Auburn University, AL (United States)

In this letter, it is demonstrated that 4H-SiC MOSFETs with borosilicate glass (BSG) as the gate dielectric result in significantly higher channel mobility than standard nitride oxide annealed devices, due to lower density of near-interfacial traps at the BSG/SiC interface. Using a thin Antimony-doped surface layer in conjunction with the BSG dielectric results in higher channel mobility at room temperature. The field-effect channel mobility of such devices is found to be 180 cm²/V · s at low transverse electric fields (close to threshold) and 94 cm²/V · s at high fields (~2 MV/cm), which is about a factor of five higher than the state-of-the-art.This, along with a tunable threshold voltage, could make this approach very attractive for power MOSFET applications. Furthermore, the poor bias temperature instability of BSG is a big challenge for utilization of this dielectric.

View Accepted Manuscript (DOE)

Research Organization:: Auburn University, AL (United States); North Carolina State University, Raleigh, NC (United States)

Sponsoring Organization:: U.S. Army Research Laboratory; U.S. National Science Foundation; USDOE

Grant/Contract Number:: EE0006521

OSTI ID:: 2440711

Alternate ID(s):: OSTI ID: 1541475
OSTI ID: 2440813

Journal Information:: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 10 Vol. 38; ISSN 0741-3106

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping

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