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Passivation of the 4H-SiC/SiO₂ Interface with Nitric Oxide

Journal Article · Mon Dec 31 23:00:00 EST 2001 · Materials Science Forum

DOI:https://doi.org/10.4028/www.scientific.net/MSF.389-393.967· OSTI ID:829381

Williams, J R ^[1]

ORNL

No abstract prepared.

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Research Organization:: ORNL Oak Ridge National Laboratory

Sponsoring Organization:: DOE

DOE Contract Number:: AC05-00OR22725

OSTI ID:: 829381

Report Number(s):: P02-115904

Journal Information:: Materials Science Forum, Journal Name: Materials Science Forum Vol. 389-393; ISSN MSFOEP; ISSN 0255-5476

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
MATERIALS
NITRIC OXIDE
ORNL
PASSIVATION