Interface State Density and Channel Mobility for 4H-SiC MOSFETs with Nitrogen Passivation
Journal Article
·
· Applied Surface Science
- ORNL
No abstract prepared.
- Research Organization:
- ORNL Oak Ridge National Laboratory
- Sponsoring Organization:
- DOE
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 829492
- Report Number(s):
- P02-113170
- Journal Information:
- Applied Surface Science, Journal Name: Applied Surface Science Vol. 184; ISSN ASUSEE; ISSN 0169-4332
- Country of Publication:
- United States
- Language:
- English
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