Ta-based interface ohmic contacts to AlGaN/GaN heterostructures
Journal Article
·
· Journal of Applied Physics
No abstract prepared.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE. Office of Science with UT-Battelle, LLC Contract DE-AC05-00OR22725; Department of Defense.Ballistic Missile Defense Technology Contract W31RPD-9-A9604. US Army Space and Strategic Defense Command, Office of the Secretary of Defense. Office of Naval Research POLARIS MURI; University of California, San Diego (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 828127
- Report Number(s):
- LBNL-48507; JAPIAU; TRN: US200427%%13
- Journal Information:
- Journal of Applied Physics, Vol. 89, Issue 10; Other Information: Journal Publication Date: 15 May 2001; PBD: 10 Jan 2001; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ta-based advancing interface ohmic contacts to AlGaN/GaN heterostructures
Ta-based Advancing Interface Ohmic Contacts to AlGaN/GaN Heterostructures
Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN
Journal Article
·
Fri Feb 01 00:00:00 EST 2002
· Journal of Applied Physics
·
OSTI ID:828127
+6 more
Ta-based Advancing Interface Ohmic Contacts to AlGaN/GaN Heterostructures
Journal Article
·
Tue May 01 00:00:00 EDT 2001
· Journal of Applied Physics
·
OSTI ID:828127
Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN
Journal Article
·
Mon Aug 27 00:00:00 EDT 2001
· Applied Physics Letters
·
OSTI ID:828127
+1 more