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Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN

Journal Article · Mon Aug 27 04:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1378312· OSTI ID:786993

Lim, S -H ^[1]; Washburn, J; Liliental-Weber, Z; Qiao, D

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: BMDO, Contract No. W31RPD-9-A9604 (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 786993

Report Number(s):: LBNL--48015

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 78; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM NITRIDES
ELECTRIC CONTACTS
ELECTRICAL PROPERTIES
GALLIUM NITRIDES
MICROSTRUCTURE
TANTALUM
TITANIUM