Annealing-environment effects in the epitaxial regrowth of ion-beam-amorphized layers on CaTiO{sub 3}

Journal Article · Tue Aug 01 04:00:00 EDT 1995 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.360244· OSTI ID:82231

Rankin, J ^[1]; McCallum, J C ^[2]; Boatner, L A ^[3]

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1. Brown University, Division of Engineering, Box D, Providence, Rhode Island 02912 (United States)
2. Microelectronics and Materials, Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Victoria GPO Box 2476V, 3001 (Australia)
3. Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6056 (United States)

The effects of water-vapor ambients on the solid-state epitaxial regrowth of ion-beam-amorphized, near-surface layers on single-crystal CaTiO{sub 3} have been investigated using Rutherford backscattering-channeling spectroscopy, time-resolved reflectivity, and cross-sectional transmission electron microscopy (TEM). The presence of water vapor in the annealing atmosphere increases the thermally induced epitaxial regrowth rate and, within the temperature range studied (400--550 {degree}C), decreases the activation energy for this process. TEM micrographs from samples which were partially regrown in high-H{sub 2}O-concentration atmospheres revealed uneven amorphous/crystalline interfaces with fluctuations on the order of 5--10 nm. Samples annealed in water-vapor-deficient atmospheres exhibited very flat interfaces after partial epitaxial regrowth. The morphologies of these interfaces are explained in terms of a segregation of hydrogen ahead of the regrowth interface. Additionally, it has been determined that the absence of oxygen does not affect the regrowth rate. Samples annealed in oxygen concentrations as low as 10{sup {minus}21} atm exhibit growth rates that are identical to those measured for air-annealed CaTiO{sub 3} samples. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• OSTI ID: 82231
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 78; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ANNEALING
CALCIUM COMPOUNDS
ELECTRON MICROSCOPY
EPITAXY
ION IMPLANTATION
LAYERS
OXIDATION
TITANATES
WATER VAPOR