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The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized SrTiO sub 3

Journal Article · · Journal of Materials Research; (United States)
; ;  [1]
  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal SrTiO{sub 3}. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2{plus minus}0.1 eV. When the concentration of H{sub 2}O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to {similar to}0.95 eV. When regrown in atmospheres containing H{sub 2}O vapor, the SrTiO{sub 3} amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface.
DOE Contract Number:
AC05-84OR21400
OSTI ID:
7034783
Journal Information:
Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 7:3; ISSN JMREE; ISSN 0884-2914
Country of Publication:
United States
Language:
English