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Extended defects and polarity of hydride vapor phase epitaxy GaN

Journal Article · Mon Apr 29 00:00:00 EDT 2002 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-002-0096-5· OSTI ID:821631

Jasinski, J ^[1]; Liliental-Weber, Z

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: Air Force Office of Scientific Research, Order No. AFOSR-ISSA-00-0011 (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 821631

Report Number(s):: LBNL--50187

Journal Information:: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 5 Vol. 31; ISSN JECMA5; ISSN 0361-5235

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
DEFECTS
HYDRIDES
VAPOR PHASE EPITAXY