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Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers

Journal Article · Sun Jan 27 23:00:00 EST 2002 · Physica Status Solidi A

OSTI ID:792958

Huang, D ^[1]; Visconti, P; Reshchikov, M A; Yun, F; King, T; Baski, A A; Litton, C W; Jasinski, J B; Liliental-Weber, Z; Morkoc, H

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: Air Force Office of Scientific Research,Order No. AFOSR-ISSA-00-0011 (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 792958

Report Number(s):: LBNL--49494

Journal Information:: Physica Status Solidi A, Journal Name: Physica Status Solidi A Journal Issue: 2 Vol. 188

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
BUFFERS
MOLECULAR BEAM EPITAXY
SAPPHIRE