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Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy

Journal Article · Mon Mar 24 23:00:00 EST 2003 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1599634· OSTI ID:821659

Lu, H ^[1]; Schaff, W J; Eastman, L F; Wu, J; Walukiewicz, W; Cimalla, V; Ambacher, O

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: US Department of Energy (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 821659

Report Number(s):: LBNL--54647

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 83; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
BUFFERS
GALLIUM NITRIDES
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
SAPPHIRE
SUBSTRATES