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Imaging of defect-mediated surface morphology of GaN(0001) grown on sapphire by molecular beam epitaxy

Journal Article · Mon Jun 21 00:00:00 EDT 2004 · Journal of Applied Physics

OSTI ID:842999

Liu, Bing ^[1]; Kitajima, Takeshi; Zhang, Tianhao; Borca, Camelia; Leone, Stephen R

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: USDOE Director. Office of Science. Office of Basic Energy Sciences; National Institute of Standards and Technology

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 842999

Report Number(s):: LBNL--56652

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 97; ISSN JAPIAU; ISSN 0021-8979

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SAPPHIRE