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Microstructure of GaN layers grown on (001) GaAs by plasma-assisted molecular-beam-epitaxy

Journal Article · Mon Sep 01 00:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.120219· OSTI ID:773665

Ruvimov, S ^[1]; Liliental-Weber, Z; Washburn, J; Drummond, T J; Hafich, M; Lee, S R

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Research Organization:: Lawrence Berkeley National Lab., CA (US)

Sponsoring Organization:: Sandia National Laboratories, Contract No. AS-8829. (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 773665

Report Number(s):: LBNL--40912

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 71; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY