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Growth and Characterization of Low Defect GaN by Hydride Vapor Phase Epitaxy

Journal Article · Mon Dec 31 23:00:00 EST 2001 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/S0022-0248(02)01745-1· OSTI ID:815913

Xu, X ^[1]

SLAC

No abstract prepared.

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Research Organization:: Stanford Linear Accelerator Center, Menlo Park, CA (US); Stanford Synchrotron Radiation Lab. (US)

Sponsoring Organization:: USDOE Office of Science (US)

DOE Contract Number:: AC03-76SF00515

OSTI ID:: 815913

Report Number(s):: SLAC-REPRINT-2002-319

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
GALLIUM NITRIDES
HYDRIDES
STANFORD SYNCHROTRON RADIATION LABORATORY
VAPOR PHASE EPITAXY