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Characterization of free-standing hydride vapor phase epitaxy GaN

Journal Article · Tue May 22 04:00:00 EDT 2001 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1359779· OSTI ID:783510

Jasinski, J ^[1]; Swider, W; Liliental-Weber, Z; Visconti, P; Jones, K M; Reschchikov, M A; Yun, F; Morkoc, H; Park, S S; Lee, K Y

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Research Organization:: Lawrence Berkeley National Lab., CA (US)

Sponsoring Organization:: Air Force Office of Scientific Research, Order No. AFOSR-ISSA-00-0011 (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 783510

Report Number(s):: LBNL--47891

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 78; ISSN 0003-6951; ISSN APPLAB

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
CHEMICAL PROPERTIES
GALLIUM NITRIDES
HYDRIDES
VAPOR PHASE EPITAXY