Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN
The optical emission properties of mass-transport regions of GaN grown by hydride vapor phase epitaxy are studied by cathodoluminescence imaging and spectroscopy. A strong donor{endash}acceptor pair emission is observed from the mass-transport regions. Spatially resolved cathodoluminescence reveals a strong intensity contrast between the exciton and donor{endash}acceptor bands from mass-transport and nontransport regions. Focused Auger electron and x-ray photoelectron spectroscopies were employed to investigate the impurity incorporation in the different regions. A preferential moderate increase of residual impurity incorporation or redistribution in mass-transport regions is suggested to be responsible for the observed change of the dominant radiative mechanism. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204576
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 78; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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