Method for repairing Mo/Si multilayer thin film phase defects in reticles for extreme ultraviolet lithography
Journal Article
·
· Applied Physics B: Lasers and Optics
OSTI ID:800575
No abstract prepared.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 800575
- Report Number(s):
- LBNL/ALS-43734; TRN: US0202789
- Journal Information:
- Applied Physics B: Lasers and Optics, Vol. 91, Issue 1; Other Information: Journal Publication Date: January 2001; PBD: 1 Jan 2001
- Country of Publication:
- United States
- Language:
- English
Similar Records
Mo/Si/and Mo/Be multilayer thin films on Zerodur substrates for extreme-ultraviolet lithography
Stress, reflectance, and temporal stability of sputter-deposited Mo/Si and Mo/Be multilayer films for extreme ultraviolet lithography
Reticle blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers
Journal Article
·
Sat Apr 01 00:00:00 EST 2000
· Applied Optics
·
OSTI ID:800575
Stress, reflectance, and temporal stability of sputter-deposited Mo/Si and Mo/Be multilayer films for extreme ultraviolet lithography
Journal Article
·
Fri Jan 01 00:00:00 EST 1999
· Optical Engineering
·
OSTI ID:800575
Reticle blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers
Conference
·
Mon Jun 24 00:00:00 EDT 1996
·
OSTI ID:800575
+6 more