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MOVPE of GaN on sapphire using the alternate precursor 1,1-dimethylhydrazine

Journal Article · Thu Jun 01 00:00:00 EDT 2000 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/S0022-0248(00)00693-X· OSTI ID:792931

Bourret-Courchesne, E D ^[1]; Yu, K M; Irvine, S J.C.; Stafford, A; Rushworth, S A; Smith, L M; Kanjolia, R

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 792931

Report Number(s):: LBNL--47000

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 221; ISSN JCRGAE; ISSN 0022-0248

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
PRECURSOR
SAPPHIRE
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY