Evolution of crystallinity of GaN layers grown at low temperature on sapphire with dimethylhydrazine and triethylgallium
Journal Article
·
· Journal of Crystal Growth
OSTI ID:792971
- LBNL Library
No abstract prepared.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 792971
- Report Number(s):
- LBNL--49556
- Journal Information:
- Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: 1-2 Vol. 231; ISSN JCRGAE; ISSN 0022-0248
- Country of Publication:
- United States
- Language:
- English
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