The atomic arrangement at Cr/GaAs (110) interfaces
Journal Article
·
· Journal of Vacuum Science and Technology B
- LBNL Library
As part of a project to explore the mechanism of Schottky barrier formation at a metal-semiconductor interface, high-resolution electron microscope images were simulated as an aid to interpretation of the contrast observed experimentally at Cr/GaAs(110) interfaces.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences; Office of Naval Research N0014-86-K-0668 (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 791219
- Report Number(s):
- LBNL--49295
- Journal Information:
- Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 4 Vol. 7
- Country of Publication:
- United States
- Language:
- English
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