Atomic arrangement at Cr/GaAs(110) interfaces

Journal Article · Sat Jul 01 04:00:00 EDT 1989 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584794· OSTI ID:5951980

Liliental-Weber, Z; O'Keefe, M A

To further explore the mechanism of Schottky barrier formation at a metal--semiconductor interface, high-resolution electron micrographs were simulated in order to interpret the contrast observed experimentally at Cr/GaAs(110) interfaces. Calculations for a wide range of defocus and sample thickness values, based on an assumed ideal arrangement of atoms at the interface, do not explain the observed contrast. Analytical data suggest that the interface is As rich. In this paper, therefore, only those point defects that lead to As-rich interfaces were considered. Among such point defects, Ga vacancies seem likely to contribute to such experimentally observed contrast.

• Research Organization: Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720(US); National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5951980
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 7:4; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
ATOMS
CHEMICAL BONDS
CHEMICAL COMPOSITION
CHROMIUM
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
METALS
MICROSCOPY
PHYSICAL PROPERTIES
PNICTIDES
POINT DEFECTS
SIMULATION
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY