Measurement and modulation of atomic interdiffusion at Au--Al/GaAs(110) interfaces

Journal Article · Mon Sep 01 04:00:00 EDT 1980 · J. Vac. Sci. Technol.; (United States)

DOI:https://doi.org/10.1116/1.570609· OSTI ID:5105104

Brillson, L J; Margaritondo, G; Stoffel, N G; Bauer, R S; Bachrach, R Z; Hansson, G

Atomic layers of Al at Au-GaAs(110) interfaces have been used to measure the absolute motion of metal and semiconductor atoms at their intimate contact. This new technique reveals both Au indiffusion and nonstoichiometric outdiffusion during the initial stages of Schottky barrier formation. The Al ''interlayers'' at Au--GaAs interfaces also modulate the relative Ga to As diffusion into Au by over an order of magnitude. This new phenomenon at compound semiconductor--metal interfaces reveals a systematic relationship between the local atomic bonding and the extended chemical structure of the interface.

• Research Organization: Xerox Webster Research Center, 800 Phillips Road W-114, Webster, New York 14580
• OSTI ID: 5105104
• Journal Information: J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 17:5; ISSN JVSTA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CHEMISORPTION
CRYSTAL STRUCTURE
DIFFUSION
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
INTERFACES
IONIZING RADIATIONS
LAYERS
METALS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
RADIATIONS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEPARATION PROCESSES
SORPTION
SPECTROSCOPY
TRANSITION ELEMENTS
ULTRAHIGH VACUUM
X RADIATION