Photoemission study of reactive rare-earth/semiconductor interfaces: Tm/GaAs(110) and Yb/GaAs(110)

Journal Article · Tue Nov 15 04:00:00 EST 1988 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.38.10655· OSTI ID:7016943

Prietsch, M; Laubschat, C; Domke, M; Kaindl, G

The behavior of interfaces formed by growing thin Tm and Yb films on p- and n-type GaAs(110) substrates at room temperature was investigated by photoemission from As 3d, Ga 3d, and metal 4f core levels. At metal coverages THETA<1 A, the core-level binding energies of substrate atoms are found to be shifted to higher and lower values, respectively, for p- and n-type GaAs; this observation is interpreted as a consequence of band bending due to defect states. In addition, photoemission signals from chemically reacted products at the interface are observed, which grow in intensity with metal coverage. In the coverage range 2

• Research Organization: Institut fuer Atom- und Festkoerperphysik, Freie Universitaet Berlin, Arnimallee 14, D-1000 Berlin 33, Germany
• OSTI ID: 7016943
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:15; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals &amp; Alloys-- Physical Properties
ARSENIC COMPOUNDS
ARSENIDES
BINDING ENERGY
CHEMICAL REACTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY
ENERGY LEVELS
ENERGY-LEVEL DENSITY
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
MATERIALS
MEDIUM TEMPERATURE
METALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
RARE EARTHS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
THERMOCHEMICAL PROCESSES
THULIUM
YTTERBIUM