Schottky barrier contacts on defect-free GaAs (110)

Journal Article · Mon Jun 18 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102873· OSTI ID:6970983

Liliental-Weber, Z; Weber, E R; Washburn, J ^[1]; Weaver, J H ^[2]

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1. Lawrence Berkeley Laboratory 62-203, 1 Cyclotron Road, Berkeley, California 94720 (USA) Department of Materials Science, University of California, Berkeley, California 94720 (USA)
2. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (USA)

High resolution transmission electron microscopy and analytical electron microscopy show direct evidence for defect-free interfaces produced by {ital in} {ital situ} cluster deposition of Au, Ag, and Ti onto ultrahigh vacuum-cleaved {ital n}-GaAs. In contrast to interfaces produced by atom-by-atom deposition, no specific interface reconstruction or orientation relationship and no change of stoichiometry of the GaAs near the interface was observed. Schottky barrier heights correspond to unusual Fermi level pinning positions in the upper half of the GaAs band gap, in clear contrast to values obtained for atom deposition and for diodes prepared by standard technology on GaAs (100). These results give clear evidence that Fermi level pinning for metal/GaAs interfaces formed without defects does not follow the predictions of current metal-induced gap-state models.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6970983
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:25; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
ELECTRON MICROSCOPY
ENERGY LEVELS
FABRICATION
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAWRENCE BERKELEY LABORATORY
MICROSCOPY
NATIONAL ORGANIZATIONS
PNICTIDES
SCHOTTKY BARRIER DIODES
SCHOTTKY EFFECT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
US AEC
US DOE
US ERDA
US ORGANIZATIONS