Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts

Journal Article · Sun Jan 22 23:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100968· OSTI ID:6876331

Liliental-Weber, Z; Newman, N; Washburn, J; Weber, E R; Spicer, W E

The structure of as-deposited and annealed Cr/GaAs Schottky contacts was investigated by high resolution and analytical electron microscopy. The Schottky barrier height for contacts prepared by cleavage and in situ metallization in ultrahigh vacuum was stable upon annealing up to 370 /sup 0/C in N/sub 2/. In contrast, the contacts prepared on air-exposed substrates show an increase of the barrier height by 80 meV during annealing in the same range of temperatures. Comparing these two types of contacts, distinct differences in the grain size, presence of an oxide layer at the interface, and change in stoichiometry in the substrate beneath the contact were detected.

• Research Organization: Department of Material Science and Mineral Engineering, University of California, Berkeley, California 94720 and Center for Advanced Materials, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720
• OSTI ID: 6876331
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHROMIUM
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRAIN SIZE
HEAT TREATMENTS
INTERFACES
METALS
MICROSCOPY
MICROSTRUCTURE
PHYSICAL PROPERTIES
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SIZE
STABILITY
TRANSITION ELEMENTS