Schottky barrier instabilities due to contamination

Journal Article · Mon Jul 11 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100351· OSTI ID:7198656

Newman, N; Liliental-Weber, Z; Weber, E R; Washburn, J; Spicer, W E

We reported here a systematic study of the annealing-induced changes in the barrier height of Schottky barrier diodes fabricated on atomically clean and contaminated surfaces. Al, Ag, Au, and Cr/GaAs(110) diodes were fabricated by in situ deposition on clean n-type GaAs(110) surfaces prepared by cleavage in ultrahigh vacuum and on contaminated surfaces prepared by cleavage and exposure to the atmosphere for approx.1--2 h. This study demonstrates that the as-deposited barrier height and the annealing-induced changes in the barrier height of diodes formed with an interfacial layer of contamination are distinctly different from the characteristics of diodes formed on clean semiconductor surfaces. The presence of an interfacial layer of contamination is found to significantly degrade the stability of the diode's barrier height to annealing.

• Research Organization: Stanford Electronics Laboratories, Stanford University, Stanford, California 94305, Material and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
• OSTI ID: 7198656
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHROMIUM
CONTAMINATION
DATA
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
HEAT TREATMENTS
INFORMATION
INSTABILITY
METALS
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILVER
TRANSITION ELEMENTS