Schottky barrier heights for GaAs diodes fabricated at low temperatures

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7237656

Wilks, S P; Morris, J I; Woolf, D A; Williams, R H ^[1]

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1. Univ. of Wales, Cardiff (United Kingdom)

High-quality Schottky diodes have been fabricated by depositing several metals onto atomically clean molecular-beam epitaxy grown surfaces of GaAs(100) displaying (4 {times} 6) and c(4 {times} 4) reconstructed forms. Diodes have been made at temperatures of 80, 200, and 300 K and the barrier heights investigated by the current-voltage method at these temperatures and following temperature cycles. In all cases investigated, the Schottky barrier heights are large and similar to those for the same metals on GaAs (110) surfaces. These results are in complete contrast with those recently reported where soft x-ray photoemission and internal photoemission data for metals on GaAs (100) surfaces were interpreted in terms of the Schottky model.

• OSTI ID: 7237656
• Report Number(s): CONF-910115--
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 9:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360606* -- Other Materials-- Physical Properties-- (1992-)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DEPLETION LAYER
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
MATERIALS
METALS
MOLECULAR BEAM EPITAXY
PHYSICAL PROPERTIES
PNICTIDES
SCHOTTKY BARRIER DIODES
SCHOTTKY EFFECT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K