Increased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces
- Xerox Webster Research Center, NY (United States)
- Univ. of Wisconsin, Madison (United States)
- IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
The authors report a room temperature soft x-ray photoemission spectroscopic study of electronic barrier formation and chemistry at Al, Ag, and Au contacts with horizontal Bridgman-grown GaAs(100) surfaces, prepared by etching, heat-cleaning in situ, and As-capping. They observed a pronounced chemical reaction with formation of dissociated Ga for Al, a minimal interface reaction for Ag, and interdiffusion for Au. However, they formed significant differences in the interface electronic barrier heights between the present metal/melt-grown (100) surfaces. They obtained Schottky barrier heights of 0.62, 0.85, and 1.03 eV respectively for Al, Ag, and Au/GaAs interfaces covering a range of 0.41 eV - in contrast to the 0.2-0.3 eV range obtained earlier for both cleaved (110) and heat-cleaned (100) surfaces as well as the 0.7 eV range observed for metal/molecular beam epitaxy GaAs(100) interfaces. This intermediate behavior underscores the dependence of barrier height variation on different growth and interface processing techniques.
- OSTI ID:
- 7115705
- Report Number(s):
- CONF-910115--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ballistic electron emission microscopy studies of Au-CdTe and Au-GaAs interfaces and band structure
Au and Al Schottky barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating
Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTION KINETICS
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY LEVELS
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
INTERFACES
KINETICS
METALS
PHYSICAL PROPERTIES
PNICTIDES
REACTION KINETICS
SCHOTTKY EFFECT
SEMIMETALS
SILVER
TRANSITION ELEMENTS