Next Generation Thin Films for Photovoltaics: InGaAsN; Preprint

Conference · Wed Mar 31 23:00:00 EST 1999

OSTI ID:789287

Jones, E D; Allerman, A A; Klem, J F; Kurtz, S R; Modine, N R ^[1]; Friedman, D J; Geisz, J F ^[2]; Shan, W; Walukiewicz, W ^[3]; Tu, C ^[4]

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1. Sandia National Laboratories
2. National Renewable Energy Laboratory
3. Lawrence Berkeley National Laboratories
4. University of California San Diego

A new semiconductor alloy system, InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen ({approx}2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content! With the appropriate ratio of indium to nitrogen concentrations, InGaAsN can be lattice matched to GaAs.

• Research Organization: National Renewable Energy Lab., Golden, CO (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 789287
• Report Number(s): NREL/CP-520-29589
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALLOY SYSTEMS
INDIUM
INGAASN
NITROGEN
PHOTOVOLTAICS
SOLAR CELLS
THIN FILMS