Next Generation Thin Films for Photovoltaics: InGaAsN

Journal Article · Thu Jun 17 00:00:00 EDT 1999 · Basic Research Opportunities in Photovoltaics/Photovoltaics for the 21st Century

OSTI ID:7867

Allerman, A A ^[1]; Friedman, D J; Geisz, J F; Jones, E D; Klem, J F; Kurtz, Steven R; Modine, N R; Shan, W; Tu, C; Walukiewicz, W

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1. Sandia National Laboratories

A new semiconductor alloy system, InGaAsN, has been identified as a can- didate material for multi~junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen (~2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content! With the appropriate ratio of indium to nitrogen concentrations, InGaAsN can be lattice matched to GaAs.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 7867
• Report Number(s): SAND99-1534J; ON: DE00007867
• Journal Information: Basic Research Opportunities in Photovoltaics/Photovoltaics for the 21st Century, Journal Name: Basic Research Opportunities in Photovoltaics/Photovoltaics for the 21st Century
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
Gallium Arsenides
Gallium Nitrides
Indium Arsenides
Indium Nitrides
Thin Films